Phone manufacturers are increasingly incorporating artificial intelligence (AI) into their latest devices to propel them into the future. However, to make this possible, they need hardware that can support AI-powered features. One essential piece of hardware for this is the chipset inside the phone. The new Snapdragon 8 Gen 3 and Snapdragon 7 Gen 3 processors are designed with on-device AI in mind.
Apart from chipsets, other components play a crucial role in determining the speed at which these AI features operate. One such component is storage. While some may think of storage only in terms of size, there is another aspect to consider – speed. Samsung Semiconductor has introduced the latest UFS 4.0 technology, which offers double the read and write speeds compared to its predecessor, UFS 3.1.
Samsung Semiconductor has shared its plans for the future of storage technology on Weixin social media platform. They are set to release UFS 4.0 4-lane CS in 2025, with production beginning in 2024. This upgraded version will feature two UFS controllers for increased sequential read speed, capable of reaching speeds of up to 8GB/s.
Looking even further ahead, Samsung aims to launch UFS 5.0 in 2027, promising speeds of up to 10GB/s. This advancement in mobile storage technology could potentially be seen in upcoming Galaxy devices like the Galaxy S27.
It is speculated that the Galaxy S25 series may be among the first devices to feature UFS 4.0 4-lane storage given Samsung’s production timeline for this year. This upgrade will not only enhance loading times but also boost on-device AI applications, aligning perfectly with the industry’s shift towards AI integration in smartphones. Stay tuned for more updates on how Samsung’s cutting-edge storage technology will shape the future of mobile devices!
